NTMFS4708N
30
25
20
3.4 V
10 V
3.8 V to 4.5
V GS = 3 V
T J = 25 ° C
42
36
30
V DS = 10 V
24
15
2.8 V
10
2.6 V
18
12
T J = 125 ° C
T J = -55 ° C
5
6
0
2.4 V
0
T J = 25 ° C
0
1
2
3
4
5
0
1
2
3
4
5
0.02
0.015
V DS , DRAIN-TO-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
V GS = 10 V
T = 125 ° C
0.018
0.014
V GS , GATE-TO-SOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
T J = 25 ° C
0.01
0.005
0
T = 25 ° C
T = -55 ° C
0.01
0.006
0.002
V GS = 4.5 V
V GS = 10 V
0
5
10
15
20
25
30
4
8
12
16
20
24
I D , DRAIN CURRENT (A)
Figure 3. On-Resistance versus Drain Current
and Temperature
2
I D = 9 A
1.8 V GS = 10 V
1.6
1.4
1.2
100000
10000
I D , DRAIN CURRENT (A)
Figure 4. On-Resistance versus Drain Current
and Gate Voltage
V GS = 0 V
T J = 150 ° C
1
0.8
0.6
1000
100
T J = 125 ° C
-50
-25
0
25
50
75
100
125
150
0
5
10
15
20
25
30
T J , TEMPERATURE ( ° C)
Figure 5. On-Resistance Variation with
Temperature
http://onsemi.com
3
V DS , DRAIN-TO-SOURCE VOLTAGE (V)
Figure 6. Drain-to-Source Leakage Current
versus Voltage
相关PDF资料
NTMFS4744NT1G MOSFET N-CH 30V 7A SO8 FL
NTMFS4821NT3G MOSFET N-CH 30V 8.8A SO-8FL
NTMFS4823NT3G MOSFET N-CH 30V 6.9A SO-8FL
NTMFS4825NFET3G MOSFET N-CH 30V 171A SO-8FL
NTMFS4833NST1G MOSFET N-CH 30V 16A SO-8FL
NTMFS4833NT3G MOSFET N-CH 30V 16A SO-8FL
NTMFS4834NT3G MOSFET N-CH 30V 13A SO-8FL
NTMFS4836NT1G MOSFET N-CH 30V 11A SO8 FL
相关代理商/技术参数
NTMFS4709N 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 94 A, Single N-Channel, SOIC-8 FL
NTMFS4709NT1G 制造商:ON Semiconductor 功能描述:
NTMFS4709NT3G 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 94 A, Single N-Channel, SOIC-8 FL
NTMFS4741NT1G 制造商:ON Semiconductor 功能描述:
NTMFS4744N 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 53 A, Single N-Channel, SO-8 FL
NTMFS4744NT1G 功能描述:MOSFET NFET 30V 53A 10MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTMFS4744NT3G 功能描述:MOSFET NFET 30V 53A 10MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTMFS4821N 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 58.5 A, Single N−Channel, SO−8 FL